AM29N323D Datasheet, PDF (18/48 Pages) Advanced Micro Devices – 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns
to the read mode.
The device offers accelerated program operations
through V_PP. When the system asserts V_ID on this
input, the device automatically enters the Unlock
Bypass mode. The system may then write the
two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
V_PP input to accelerate the operation. Note that sectors
must be unlocked using the Sector Lock/Unlock
command sequence prior to raising V_PP to V_ID.
Figure 1 illustrates the algorithm for the program oper-
ation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 12 for timing diagrams.
START
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 4 for program command sequence.
Figure 1. Program Operation
August 8, 2002
Am29N323D
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