AM29LV017B Datasheet, PDF (39/39 Pages) Advanced Micro Devices – 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

PRELIMINARY
REVISION SUMMARY
Global
Deleted SO package from data sheet.
Revision C
Alternate CE# Controlled Erase/Program
Operations
Changed t_CP from 45 to 35 ns on 80R and 90 speed
options.
Revision C+1
Global
Changed data sheet status to Preliminary.
Reset Command
Deleted the last paragraph in this section.
Revision C+2
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor?” back to setting up the next sector address.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes refer-
ence for t_WHWH1 and t_WHWH2. These parameters are
100% tested. Corrected the note reference for t_VCS.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t_VIDR. This parameter is not
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Am29LV017B