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| AM29LV017B Datasheet, PDF (34/39 Pages) Advanced Micro Devices – 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory | |||
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PRELIMINARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
tDVEH
tDS
Data Setup Time
Min
tEHDX
tDH
Data Hold Time
Min
tOES
Output Enable Setup Time
Min
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
tWLEL
tWS
WE# Setup Time
Min
tEHWH
tWH
WE# Hold Time
Min
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
tWHWH1
tWHWH1 Programming Operation (Note 2)
Typ
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
1. Not 100% tested.
2. See the âErase and Programming Performanceâ section for more information.
-80R
-90
80
90
0
45
45
35
45
0
0
0
0
0
35
35
30
9
0.7
-120 Unit
120
ns
ns
50
ns
50
ns
ns
ns
ns
ns
ns
50
ns
ns
µs
sec
Am29LV017B
34
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