DS42585 Datasheet, PDF (34/58 Pages) Advanced Micro Devices – Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

PRELIMINARY
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
Voltage for WP#/ACC Program
V_HH Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
Voltage for Sector Protection,
V_ID
Autoselect and Temporary Sector
Unprotect
8.5
12.5
V
V_OL
Output Low Voltage
V_OH1
V_OH2
V_LKO
Output High Voltage
Flash Low V_CC Lock-Out Voltage
(Note 5)
I_OL = 4.0 mA, V_CCf = V_CCs =
V_{CC min}
I_OH = –2.0 mA, V_CCf = V_CCs =
V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
0.85 x
V_CC
V_CC–0.4
2.3
0.45
V
V
2.5
V
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max Unit
I_LI
Input Leakage Current
I_LO
Output Leakage Current
I_CC
Operating Power Supply Current
I_CC1s Average Operating Current
I_CC2s Average Operating Current
V_OL
Output Low Voltage
V_OH Output High Voltage
I_SB
Standby Current (TTL)
I_SB1
Standby Current (CMOS)
V_IN = V_SS to V_CC
CE1#s = V_IH, CE2s = V_IL or OE# =
V_IH or WE# = V_IL, V_IO= V_SS to V_CC
I_IO = 0 mA, CE1#s = V_IL, CE2s =
WE# = V_IH, V_IN = V_IH or V_IL
Cycle time = 1 µs, 100% duty,
I_IO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ V_CC – 0.2 V, V_IN ≤ 0.2 V or
V_IN ≥ V_CC – 0.2 V
Cycle time = Min., I_IO = 0 mA,
100% duty, CE1#s = V_IL, CE2s =
V_IH, V_IN = V_IL = or V_IH
I_OL = 2.1 mA
I_OH = –1.0 mA
CE1#s = V_IH, CE2 = V_IL, Other
inputs = V_IH or V_IL
CE1#s ≥ V_CC – 0.2 V, CE2 ≥ V_CC –
0.2 V (CE1#s controlled) or CE2 ≤
0.2 V (CE2s controlled), CIOs =
V_SS or V_CC, Other input = 0 ~ V_CC
–1.0
–1.0
2.4
1.0
µA
1.0
µA
3
mA
5
mA
40
mA
0.4
V
V
0.3
mA
25
µA
34
DS42585