AM29F800T Datasheet, PDF (34/41 Pages) Advanced Micro Devices – 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

PRELIMINARY
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Parameter
Symbols
JEDEC Standard Description
-70
t_AVAV
t_WC Write Cycle Time (Note 2)
Min 70
t_AVEL
t_AS Address Setup Time
Min
0
t_ELAX
t_AH Address Hold Time
Min 45
t_DVEH
t_DS Data Setup Time
Min 30
t_EHDX
t_DH Data Hold Time
Min
0
t_OES Output Enable Setup Time
Min
0
Output Enable ^{Read (Note 2)}
Min
0
t_{OEH Hold Time}
Toggle and Data Polling (Note 2) Min 10
t_GHEL
t_WLEL
t_EHWH
t_ELEH
t_EHEL
t_WHWH1
t_GHEL Read Recover Time Before Write
t_WS WE Setup Time
t_WH WE Hold Time
t_CP CE Pulse Width
t_CPH CE Pulse Width High
Byte Programming Operation
t_WHWH1
Word Programming Operation
Min
0
Min
0
Min
0
Min 35
Min 20
Typ
7
Typ 14
t_WHWH2 t_WHWH2 Sector Erase Operation (Note 1)
Typ
1
Max
8
t_FLQZ BYTE Switching Low to Output High Z (Note 2)
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
Max 20
-90 -120 -150 Unit
90 120 150 ns
0
0
0
ns
45
50
50
ns
45
50
50
ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
10
10
10
ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
45
50
50
ns
20
20
20
ns
7
7
7
µs
14
14
14
µs
1
1
1
sec
8
8
8
sec
30
30
30
ns
34
Am29F800T/Am29F800B
8/18/97