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| AM29PDL128G Datasheet, PDF (33/71 Pages) SPANSION – 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control | |||
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Addresses
(Double Word
Mode)
Addresses
(Word Mode)
1Bh
36h
1Ch
38h
1Dh
3Ah
1Eh
3Ch
1Fh
3Eh
20h
40h
21h
42h
22h
44h
23h
46h
24h
48h
25h
4Ah
26h
4Ch
PRELIMINARY
Table 11. System Interface String
Data
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Description
VCC Min. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VCC Max. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
32
Am29PDL128G
October 28, 2004
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