AM29LV800B_05 Datasheet, PDF (29/49 Pages) Advanced Micro Devices – 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
I_LI
Input Load Current
I_LIT
A9 Input Load Current
I_LO
Output Leakage Current
I_CC1
V_CC Active Read Current
(Notes 1, 2)
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
V_CC = V_{CC max}; A9 = 12.5 V
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}
CE# = V_IL, OE# ₌ V_IH,
Byte Mode
5 MHz
1 MHz
CE# = V_IL, OE# ₌ V_IH,
Word Mode
5 MHz
1 MHz
±1.0
35
±1.0
7
12
2
4
7
12
2
4
I_CC2
V_CC Active Write Current
(Notes 2, 3, 5)
CE# = V_IL, OE# ₌ V_IH
15
30
I_CC3
I_CC4
I_CC5
V_IL
V_IH
V_ID
V_CC Standby Current (Note 2)
V_CC Reset Current (Note 2)
Automatic Sleep Mode
(Notes 2, 4)
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Temporary Sector Unprotect
CE#, RESET# = V_CC±0.3 V
RESET# = V_SS ± 0.3 V
V_IH = V_CC ± 0.3 V;
V_IL = V_SS ± 0.3 V
V_CC = 3.3 V
0.2
5
0.2
5
0.2
5
–0.5
0.7 x V_CC
11.5
0.8
V_CC + 0.3
12.5
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
I_OL = 4.0 mA, V_CC = V_{CC min}
Output High Voltage
I_OH = –2.0 mA, V_CC = V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
Low V_CC Lock-Out Voltage (Note
4)
0.85 V_CC
V_CC–0.4
2.3
0.45
2.5
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH. Typical V_CC is 3.0 V.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns.
5. Not 100% tested.
Unit
µA
µA
µA
mA
mA
µA
µA
µA
V
V
V
V
V
V
Am29LV800B
27