AM29F016 Datasheet, PDF (26/36 Pages) Advanced Micro Devices – 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

AC CHARACTERISTICS
Write/Erase/Program Operations
Parameter Symbol
JEDEC Standard
Parameter Description
t_AVAV
t_WC
t_AVWL
t_AS
t_WLAX
t_AH
t_DVWH
t_DS
t_WHDX
t_DH
t_OEH
Write Cycle Time
Min
Address Setup Time
Min
Address Hold Time
Min
Data Setup Time
Min
Data Hold Time
Min
Output
Enable
Hold Time
Read 2
Min
Toggle Bit I and Data Polling
2
Min
Read Recover Time Before Write
t_GHWL
t_GHWL
(OE high to WE low)
Min
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_WHWH1
t_CS
t_CH
t_WP
t_WPH
t_WHWH1
CE Setup Time
CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
t_WHWH2 t_WHWH2 Sector Erase Operation 1
Min
Min
Min
Min
Typ
Typ
Max
t_VCS
V_CC Set Up Time 2
Min
t_VIDR
Rise Time to V_ID (Notes 2, 3)
Min
t_VLHT
Voltage Transition Time (Notes 2, 3)
Min
t_OESP
OE Setup Time to WE Active (Notes 2, 3)
Min
t_RP
RESET Pulse Width
Min
t_BUSY
Program/Erase Valid to RY/BY Delay
Min
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Group Unprotect operation.
Speed Options (Notes 1 and 2)
-75
-90
-120
-150 Unit
70
90
120
150 ns
0
0
0
0
ns
40
45
50
50
ns
40
45
50
50
ns
0
0
0
0
ns
0
0
0
0
ns
10
10
10
10
ns
0
0
0
0
ns
0
0
0
0
ns
0
0
0
0
ns
40
45
50
50
ns
20
20
20
20
ns
7
7
7
7
µs
1
1
1
1
sec
8
8
8
8
sec
50
50
50
50
µs
500
500
500
500 ns
4
4
4
4
µs
4
4
4
4
µs
500
500
500
500 ns
40
40
50
60
ns
26
Am29F016