AM29F016 Datasheet, PDF (25/36 Pages) Advanced Micro Devices – 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter Symbol
JEDEC Standard
Parameter Description
Test Setup
t_AVAV
t_AVQV
t_ELQV
t_GLQV
t_EHQZ
t_RC
t_ACC
t_CE
t_OE
t_DF
Read Cycle Time 4
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z
(Notes 3, 4)
Min
CE = V_IL
OE = V_IL
Max
OE = V_IL Max
Max
Max
t_GHQZ t_DF
Output Enable to Output High Z
(Notes 3, 4)
Max
t_AXQX t_OH
Output Hold Time From Addresses CE
or OE Whichever Occurs First
Min
t_Ready
RESET Pin Low to Read Mode
4
Max
Speed Options (Notes 1 and 2)
-75
-90
-120 -150
70
90
120
150
70
90
120
150
70
90
120
150
40
40
50
55
20
20
30
35
20
20
30
35
0
0
0
0
20
20
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
µs
Notes:
1. Test Conditions (for -75):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level: 1.5 V input and
output
2. Test Conditions (for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level: 0.8 V and 2.0 V
input and output
3. Output driver disable time.
4. Not 100% tested.
5.0 Volt
Device
Under
Test
C_L
Note:
C_L (for -75) = 30 pF including jig capacitance
C_L (for all others) = 100 pF including jig capacitance
IN3064
or Equivalent
2.7 kΩ
6.2 kΩ
Diodes = IN3064
or Equivalent
Figure 7. Test Conditions
18805D-11
Am29F016
25