AM29LV800B Datasheet, PDF (24/42 Pages) Advanced Micro Devices – 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

PRELIMINARY
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
I_LI
Input Load Current
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
I_LIT
A9 Input Load Current
V_CC = V_{CC max}; A9 = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}
CE# = V_IL, OE# ₌ V_IH,
5 MHz
7
I_CC1
V_CC Active Read Current
(Note 1)
Byte Mode
CE# = V_IL, OE# ₌ V_IH,
1 MHz
5 MHz
2
7
Word Mode
1 MHz
2
I_CC2
V_CC Active Write Current
(Notes 2 and 4)
CE# = V_IL, OE# ₌ V_IH
15
I_CC3
V_CC Standby Current
V_CC = V_{CC max};
CE#, RESET# = V_CC±0.3 V
I_CC4
V_CC Reset Current
V_CC = V_{CC max};
RESET# = V_SS ± 0.3 V
I_CC5
Automatic Sleep Mode (Note 3)
V_IH = V_CC ± 0.3 V;
V_IL = V_SS ± 0.3 V
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and
Temporary Sector Unprotect
V_CC = 3.3 V
0.2
0.2
0.2
–0.5
0.7 x V_CC
11.5
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-Out Voltage
(Note 4)
I_OL = 4.0 mA, V_CC = V_{CC min}
I_OH = –2.0 mA, V_CC = V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
0.85 V_CC
V_CC–0.4
2.3
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH. Typical V_CC is 3.0 V.
2. I_CC active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns.
4. Not 100% tested.
Max
Unit
±1.0
µA
35
µA
±1.0
µA
12
4
mA
12
4
30
mA
5
µA
5
µA
5
µA
0.8
V
V_CC + 0.3 V
12.5
V
0.45
V
V
2.5
V
24
Am29LV800B