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2GB-DDR2-AS4C256M8D2 Datasheet, PDF (51/70 Pages) Alliance Semiconductor Corporation – Weak Strength Data-Output Driver Option
2Gb DDR2 - AS4C256M8D2
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
Input DC logic level
VM =
2 x Vm
- 1 x 100%
VDDQ
Symbol
VIH(dc)
VIL(dc)
Parameter
dc input logic HIGH
dc input logic LOW
Min.
VREF + 0.125
- 0.3
Max.
VDDQ + 0.3
VREF - 0.125
Units
V
V
Input AC logic level
DDR2-800
Unit
Symbol
Parameter
Min
Max
VIH(ac)
ac input logic HIGH
VREF+0.200 VDDQ+Vpeak
V
VIL(ac)
ac input logic LOW
VSSQ-Vpeak VREF-0.200
V
Notes
AC input test conditions
Symbol
VREF
VSWING(MAX)
SLEW
Condition
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
Value
0.5 x VDDQ
1.0
1.0
Units
V
V
V/ns
Notes
1
1
2, 3
NOTE 1 Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level
applied to the device under test.
NOTE 2 The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min
for rising edges and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.
NOTE 3 AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the pos-
itive transitions and VIH(ac) to VIL(ac) on the negative transitions.
VSWING(MAX)
Falling Slew =
TF
TR
VREF - VIL(ac) max
TF
Rising Slew =
AC input test signal waveform
VDDQ
VIH(ac) min
VIH(dc) min
VREF
VIL(dc) max
VIL(ac) max
VSS
VIH(ac) min - VREF
TR
Confidential
-51/70-
Rev.1.0 Sep. 2015