AS4C8M32S Datasheet, PDF (5/55 Pages) Alliance Semiconductor Corporation – Fully synchronous operation

AS4C8M32S
Pin Descriptions
Table 1. Pin Details
Symbol Type Description
CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the
positive edge of CLK. CLK also increments the internal burst counter and controls the
output registers.
CKE
Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If CKE goes
low synchronously with clock (set-up and hold time same as other inputs), the internal clock
is suspended from the next clock cycle and the state of output and burst address is frozen
as long as the CKE remains low. When all banks are in the idle state, deactivating the clock
controls the entry to the Power Down and Self Refresh modes. CKE is synchronous except
after the device enters Power Down and Self Refresh modes, where CKE becomes
asynchronous until exiting the same mode. The input buffers, including CLK, are disabled
during Power Down and Self Refresh modes, providing low standby power.
BA0,
BA1
Input Bank Activate: BA0 and BA1 define to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied. The bank address BA0 and BA1 is used latched
in mode register set.
A0-A11
Input
Address Inputs: A0-A11 are sampled during the BankActivate command (row address A0-
A11) and Read/Write command (column address A0-A8 with A10 defining Auto Precharge)
to select one location out of the 2M available in the respective bank. During a Precharge
command, A10 is sampled to determine if all banks are to be precharged (A10 = HIGH).
The address inputs also provide the op-code during a Mode Register Set or Special Mode
Register Set command.
CS# Input Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command
decoder. All commands are masked when CS# is sampled HIGH. CS# provides for external
bank selection on systems with multiple banks. It is considered part of the command code.
RAS#
Input Row Address Strobe: The RAS# signal defines the operation commands in conjunction
with the CAS# and WE# signals and is latched at the positive edges of CLK. When RAS#
and CS# are asserted "LOW" and CAS# is asserted "HIGH," either the BankActivate
command or the Precharge command is selected by the WE# signal. When the WE# is
asserted "HIGH," the BankActivate command is selected and the bank designated by BA is
turned on to the active state. When the WE# is asserted "LOW," the Precharge command is
selected and the bank designated by BA is switched to the idle state after the precharge
operation.
CAS#
Input Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges of CLK.
When RAS# is held "HIGH" and CS# is asserted "LOW," the column access is started by
asserting CAS# "LOW." Then, the Read or Write command is selected by asserting WE#
"LOW" or "HIGH."
WE#
Input Write Enable: The WE# signal defines the operation commands in conjunction with the
RAS# and CAS# signals and is latched at the positive edges of CLK. The WE# input is used
to select the BankActivate or Precharge command and Read or Write command.
DQM0 - Input Data Input/Output Mask: Data Input Mask: DQM0-DQM3 are byte specific. Input data is
DQM3
masked when DQM is sampled HIGH during a write cycle. DQM3 masks DQ31-DQ24,
DQM2 masks DQ23-DQ16, DQM1 masks DQ15-DQ8, and DQM0 masks DQ7-DQ0.
DQ0- Input/ Data I/O: The DQ0-31 input and output data are synchronized with the positive edges of
DQ31 Output CLK. The I/Os are byte-maskable during Reads and Writes.
NC
- No Connect: These pins should be left unconnected.
VDDQ Supply DQ Power: Provide isolated power to DQs for improved noise immunity.
VSSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Alliance Memory Confidential
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Rev. 2.0 May /2014