AS4C128M8D1-6TIN Datasheet, PDF (43/57 Pages) Alliance Semiconductor Corporation – Concurrent auto precharge option is supported

AS4C128M8D1-6TIN
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
90
80
Maximum
70
60
Typical High
50
40
Typical Low
30
Minimum
20
10
0
0.0
1.0
2.0
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
Minumum
Typical Low
Typical High
Maximum
V_DDQ Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
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Rev. 1.0 Dec. 2016