AS29LV160 Datasheet, PDF (26/29 Pages) Alliance Semiconductor Corporation – 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

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JEDEC
Symbol Std Symbol
- t_ELFL/t_ELFH
- t_FLQZ
- t_FHQZ
Parameter
CE to BYTE switching Low or High
BYTE switching Low to output High-Z
BYTE switching High to output Active
-70/80/90/120
Min
Max
-
10
-
30
80
-
%<7( UHDG ZDYHIRUP
CE
OE
Word
to
Byte
BYTE
DQ0-DQ14
DQ15/A-1
Byte
to
Word
BYTE
DQ0-DQ14
DQ15/A-1
t_ELFL
t_ELFH
DQ0-DQ14
Data output
DQ15 output
t_FLQZ
DQ0-DQ7
Data output
Address input
DQ0-DQ7
Data output
Address input
t_FHQV
DQ0-DQ14
Data output
DQ15 output
%<7( ZULWH ZDYHIRUP
CE
WE
BYTE
t_SET
See Erase/Program operations table for t_AS and t_AH specifications.
(t_AS)
falling edge of last WE signal
t_HOLD (t_AH)
6HFWRU SURWHFWXQSURWHFW
V_ID
RESET# ^VIH
SA, A6,
A1, A0
DATA
CE#
WE#
Don’t care
Valid*
Sector protect/unprotect
60h
60h
1 µs
Don’t care
Don’t care
Sector protect: 100 µs
Sector unprotect: 10 ms
Valid*
Verify
40h
Don’t care
Don’t care
$6/9
Unit
ns
ns
ns
Valid*
Status
OE#
8/30/01; V.0.9.5
* For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0.
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