AS7C3513 Datasheet, PDF (1/8 Pages) Alliance Semiconductor Corporation – 5V/3.3V 32K x 6 CMOS SRAM

August 2000
AS7C513
AS7C3513
5V/3.3V 32K×16 CMOS SRAM
• AS7C513 (5V version)
• AS7C3513 (3.3V version)
• Industrial and commercial temperature
• Organization: 32,768 words × 16 bits
• Center power and ground pins
• High speed
- 12/15/20 ns address access time
- 5/7/9 ns output enable access time
• Low power consumption: ACTIVE
- 800 mW (AS7C513) / max @ 12 ns
- 432 mW (AS7C3513) / max @ 12 ns
• Low power consumption: STANDBY
- 28 mW (AS7C513) / max CMOS
- 18 mW (AS7C3513) / max CMOS
• 2.0V data retention
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• 44-pin JEDEC standard package
- 400 mil SOJ
- 400 mil TSOP II
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
A0
A1
V_CC
A2
32K × 16
GND
A3
Array
A4
A5
A6
A7
I/O0–I/O7
I/O8–I/O15
I/O
buffer
Control circuit
WE
Column decoder
UB
OE
LB
CE
44-Pin SOJ, TSOP II (400 mil)
NC
1
A3
2
A2
3
A1
4
A0
5
CE
6
I/O0
7
I/O1
8
I/O2
9
I/O3
10
V_CC
11
GND
12
I/O4
13
I/O5
14
I/O6
15
I/O7
16
WE
17
A14
18
A13
19
A12
20
A11
21
NC
22
44
A4
43
A5
42
A6
41
OE
40
UB
39
LB
38
I/O15
37
I/O14
36
I/O13
35
I/O12
34
GND
33
V_CC
32
I/O11
31
I/O10
30
I/O9
29
I/O8
28
NC
27
A7
26
A8
25
A9
24
A10
23
NC
Maximum address access time
Maximum output enable access time
Maximum operating current
Maximum CMOS standby current
Shaded areas indicate advance information.
AS7C513
AS7C3513
AS7C513
AS7C3513
AS7C513-12
AS7C3513-12
12
5
160
120
5
5
AS7C513-15
AS7C3513-15
15
7
150
110
5
5
AS7C513-20
AS7C3513-20 Unit
20
ns
9
ns
140
mA
100
mA
5
mA
5
mA