AS6C2008 Datasheet, PDF (1/13 Pages) Alliance Semiconductor Corporation – 256K X 8 BIT LOW POWER CMOS SRAM

February 2007
Rev. 1.1
AS6C2008
®
256K X 8 BIT LOW POWER CMOS SRAM
FEATURES
Access time : 55ns
Low power consumption:
Operating current :20mA (TYP.)
Standby current :
1µ A (TYP.) LL-version
Single 2.7V ~ 3.6V power supply
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All Products ROHS Compliant
Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc Range
GENERAL DESCRIPTION
The AS6C2008 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS6C2008 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The AS6C2008 operates from a single power
supply of 2.7V ~ 3.6V
.
Speed
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
AS6C2008 (I)
-40 ~ 85ºC
2.7 ~ 3.6V
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A17
DECODER
256Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
COLUMN I/O
55ns
20µA(L)/1µA(LL)
20mA
PIN DESCRIPTION
SYMBOL
A0 - A17
DQ0 – DQ7
CE#, CE2
WE#
OE#
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
10/February/07, v.1.0
Alliance Memory Inc.
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