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5910 Datasheet, PDF (3/8 Pages) Allegro MicroSystems – HIGH-VOLTAGE BiMOS III 10-BIT SERIAL-INPUT, LATCHED DRIVERS
5910
HIGH-VOLTAGE BiMOS III
10-BIT SERIAL-INPUT,
LATCHED DRIVERS
ELECTRICAL CHARACTERISTICS at TA = +25°C, VBB = 150 V (basic devices) or
140 V (suffix “-2”) unless otherwise noted.
Characteristic
Symbol Test Conditions
Limits @ VDD = 5 V Limits @ VDD = 12 V
Mln. Typ. Max. Min. Typ. Max. Units
Output Leakage Current
Output Voltage
ICEX
VOUT(1)
VOUT(0)
Output Pull-Down Current IOUT(0)
Input Voltage
Input Current
Serial Data Output Voltage
Maximum Clock Frequency
Supply Current
Blanking to Output Delay
Output Fall Time
Output Rise Time
VIN(1)
VIN(0)
IIN(1)
IIN(0)
VOUT(1)
VOUT(0)
fclk
IDD(1)
IDD(0)
IBB(1)
IBB(0)
tPHL
tPLH
tf
tr
VOUT = 0 V, TA = +70°C
Basic, IOUT = -40 mA
Suffix “-2”, IOUT = -40 mA
IOUT = 5 mA
IOUT = 10 mA
IOUT = 30 mA
VOUT = 5 V to VBB
VOUT = 20 V to VBB
VIN = VDD
VIN = 0.8 V
IOUT = -200 µA
IOUT = 200 µA
All Outputs High
All Outputs Low
Outputs High, No Load
Outputs Low
CL = 30 pF, 50% to 50%
CL = 30 pF, 50% to 50%
CL = 30 pF, 90% to 10%
CL = 30 pF, 10% to 90%
– -5.0 -15
145 148 –
135 – –
– 2.5 3.2
– 5.0 –
–––
10 14 –
–––
3.5 – 5.3
-0.3 – +0.8
– 0.05 0.5
-0.3 – -0.8
4.5 5.0 –
– 200 250
3.3 5.0 –
– 320 450
– 320 450
– 0.6 1.75
– 10 100
– 0.7 0.9
– 0.9 1.3
– 1.3 1.5
– 1.2 1.5
– -5.0 -15
145 148 –
135 – –
– 2.0 3.2
–––
– 12 25
–––
25 40 –
10.5 – 12.3
-0.3 – +0.8
– 0.05 1.0
-0.3 – -0.8
11.7 12 –
– 200 250
5.0 – –
– 650 800
– 650 800
– 0.9 1.75
– 10 100
– 0.35 0.6
– 0.35 0.6
– 0.6 0.7
– 1.0 1.2
µA
V
V
V
V
V
mA
mA
V
V
µA
µA
V
mV
MHz
µA
µA
mA
µA
µs
µs
µs
µs
Negative current is defined as coming out of (sourcing) the specified device terminal.