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| UT54ACS164245SEI Datasheet, PDF (7/16 Pages) Aeroflex Circuit Technology – Schmitt CMOS 16-bit Bidirectional MultiPurpose Transceiver | |||
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Ptotal1 Power dissipation 5,7, 8
CL = 50pF
VDD from 4.5 to 5.5
2.0
mW/
MHz
Ptotal2 Power dissipation 5, 7, 8
CL = 50pF
VDD from 3.00 to 3.6
1.5
mW/
MHz
IDDQ
Standby Supply Current VDD1 or VDD2
Pre-Rad 25oC
Pre-Rad -55oC to +125oC
Post-Rad 25oC
VIN = VDD or VSS
VDD = 5.5
OE = VDD
OE = VDD
OE = VDD
60
μA
100
μA
100
μA
CIN
Input capacitance 9
Æ = 1MHz @ 0V
VDD from 3.0 to 5.5
15
pF
COUT Output capacitance9
Æ = 1MHz @ 0V
VDD from 3.0 to 5.5
15
pF
Notes:
1. All specifications valid for radiation dose ⤠1E5 rad(Si) per MIL-STD-883, Method 1019.
2. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
3. This parameter is unaffected by the state of OEx or DIRx.
4. Per MIL-PRF-38535, for current density ⤠5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF-MHz.
5. Guaranteed by characterization.
6. Not more than one output may be shorted at a time for maximum duration of one second.
7. Power does not include power contribution of any CMOS output sink current.
8. Power dissipation specified per switching output.
9.Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
10. Supplied as a design limit, but not guaranteed or tested.
.
7
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