English
Language : 

APT50GP60JDQ2 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT
140
120
TJ = 175°C
100
80
60
TJ = 125°C
40
20
TJ = -55°C
TJ = 25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
FiguVrFe,
ANODE-TO-CATHODE VOLTAGE
25. Forward Current vs. Forward
(V)
Voltage
1400
1200
TJ = 125°C
VR = 400V
60A
1000
800
30A
600
400
15A
200
0
0 200 400 600 800 1000 1200 1400 1600
Figure 27. -RdeiFv/edrts, eCURRecRoEvNeTryRCAhTaErgOeFvCs.HCAuNrGreEnt(AR/aµtse) of Change
1.2
Qrr
trr
1.0
0.8
trr
IRRM
0.6
0.4
Qrr
0.2
0.0
0 25 50 75 100 125 150
Figure 29. TDJy, nJaUmNiCcTPIOarNamTEeMtePrsEvRsA.TJUuRncEti(o°Cn)Temperature
200
150
100
50
0
1
10
100 200
Figure 31.
JVuRn,cRtiEoVnECRaSpEacVitOaLnTcAe GvsE.
(V)
Reverse
Voltage
APT50GP60JDQ2
200
60A
TJ = 125°C
VR = 400V
150
100
30A
15A
50
0
0 200 400 600 800 1000 1200 1400 1600
Figure
26.
R-edviFer/dste,
CURRENT RATE OF CHANGE(A/µs)
Recovery Time vs. Current Rate of Change
35
TJ = 125°C
VR = 400V
30
60A
25
20
15
30A
10
5
15A
0
0 200 400 600 800 1000 1200 1400 1600
Figure 28. R-deiFve/drts,eCRUeRcRoEvNerTyRCAuTrrEenOtFvCs.HCAuNrGreEnt(AR/aµtse) of Change
50
Duty cycle = 0.5
45
TJ = 175°C
40
35
30
25
20
15
10
5
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature