APT50GP60JDQ2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT50GP60JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT50GP60JDQ2
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
30
42
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 50A
I_F = 100A
I_F = 50A, T_J = 125°C
2.1
2.6
1.75
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
21
ns
t_rr
Reverse Recovery Time
-
105
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
115
nC
-
3
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
125
ns
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
465
nC
-
7
-
Amps
t_rr
Reverse Recovery Time
-
60
Q_rr
Reverse Recovery Charge
I_F = 30A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
830
I_{RRM Maximum Reverse Recovery Current}
-
23
ns
nC
Amps
1.40
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
Duty Factor D = ^t1/t2
0.05
SINGLE PULSE
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
RC MODEL
0.320
0.00278
Power
(watts)
0.515
0.0421
0.375
0.242
Case temperature (°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL