APT15GP60BDQ1 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

60
50
40
30
T_J = 150°C
20
T_J = 125°C
10
T_J = 25°C
0
T_J = -55°C
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
700
600
T_J = 125°C
V_R = 400V
30A
500
400
15A
300
7.5A
200
100
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
t_rr
1.0
0.8
I_RRM
0.6
t_rr
0.4
Q_rr
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 30. Dynamic Parameters vs. Junction Temperature
90
80
70
60
50
40
30
20
10
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 32. Junction Capacitance vs. Reverse Voltage
APT15GP60BDQ1
140
120
T_J = 125°C
V_R = 400V
30A
100
15A
80
7.5A
60
40
20
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
25
T_J = 125°C
V_R = 400V
20
30A
15
10
15A
7.5A
5
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 29. Reverse Recovery Current vs. Current Rate of Change
35
Duty cycle = 0.5
T_J = 175°C
30
25
20
15
10
5
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature