APT15GP60BDQ1 Datasheet, PDF (1/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT15GP6^A0^PTB^15GD^P6Q^0BD1^Q1
600V
POWER MOS 7^® IGBT
TO-247
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
E
• Low Conduction Loss
• 100 kHz operation @ 400V, 19A
C
• Low Gate Charge
• 200 kHz operation @ 400V, 12A
• Ultrafast Tail Current shutoff • SSOA rated
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT15GP60BDQ1
UNIT
V_CES
V_GE
I_C1
I_C2
I_CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 150°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
56
27
65
65A @ 600V
250
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V_(BR)CES
V_GE(TH)
V_CE(ON)
I_CES
I_GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 500µA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 15A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 15A, T_j = 125°C)
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX UNIT
600
3
4.5
6
Volts
2.2 2.7
2.1
275
µA
3000
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com