APTM50UM19S Datasheet, PDF (7/7 Pages) Advanced Power Technology – Single switch Series & parallel diodes MOSFET Power Module

Delay Times vs Current
100
td(off)
80
60
V_DS=333V
R_G=1Ω
T_J=125°C
40 L=100µH
20
td(on)
0
20 60 100 140 180 220 260
I_D, Drain Current (A)
Switching Energy vs Current
10
V_DS=333V
8 ^RG=1Ω
E_on
T_J=125°C
L=100µH
6
4
E_off
2
0
20 60 100 140 180 220 260
I_D, Drain Current (A)
Operating Frequency vs Drain Current
400
350
V_DS=333V
D=50%
300
R_G=1Ω
250
T_J=125°C
200
150
100
50
0
0 20 40 60 80 100 120 140
I_D, Drain Current (A)
APTM50UM19S
Rise and Fall times vs Current
120
V_DS=333V
100 R_G=1Ω
t_f
T_J=125°C
80 L=100µH
60
40
t_r
20
0
20 60 100 140 180 220 260
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
16
V_DS=333V
14 _ID=163A
12 ^TJ^=125°C
E_off
L=100µH
10
8
6
E_on
4
2
0
0
2.5
5
7.5 10 12.5
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V_SD, Source to Drain Voltage (V)
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