APTM50UM19S Datasheet, PDF (1/7 Pages) Advanced Power Technology – Single switch Series & parallel diodes MOSFET Power Module

APTM50UM19S
Single switch
Series & parallel diodes
MOSFET Power Module
V_DSS = 500V
R_DSon = 19mΩ max @ Tj = 25°C
I_D = 163A @ Tc = 25°C
SK
CR1
Application
D
· Motor control
S
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Q1
Features
G
· Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Low stray inductance
- M6 power connectors
- M4 signal connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
500
V
T_c = 25°C
163
T_c = 80°C
122
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
652
±30
V
19
mW
P_D Maximum Power Dissipation
T_c = 25°C
1136
W
I_AR Avalanche current (repetitive and non repetitive)
46
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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