APT5010JVRU2 Datasheet, PDF (7/7 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5010JVRU2
+15v
0v
-15v
Vr
30µH
D.U.T.
di_F/dt Adjust
PEARSON 411
CURRENT
TRANSFORMER
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
trr/Qrr
Waveform
1 I_F - Forward Conduction Current
2
di_F/dt
-
Current
Current
Slew Rate, Rate of Forward
Change Through Zero Crossing.
3 I_RRM - Peak Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time Measured from Point of I_F
{ } Current Falling Through Zero to a Tangent Line 6 diM/dt
Extrapolated Through Zero Defined by 0.75 and 0.50 I_RRM.
2
5 Qrr - Area Under the Curve Defined by I_RRM and trr.
6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
4
6
5
3
0.5 IRRM
0.75 IRRM
Qrr ₌ ^1/2 ₍trr . I_RRM)
Figure 23, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP^®) Package Outline
r = 4.0 (.157)
(2 places)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
Cathode
1.95 (.077)
2.14 (.084)
Drain
Changed 2/10/99
Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058