APT5010JVRU2 Datasheet, PDF (5/7 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5010JVRU2
DYNAMIC CHARACTERISTICS
Symbol Characteristic
MIN
t_rr1
t_rr2
t_rr3
t_fr1
t_fr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
V_fr1
V_fr2
diM / dt
Reverse Recovery Time, I_F = 1.0A, di_F/dt = -15A/µS, V_R = 30V, T_J = 25°C
Reverse Recovery Time
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V
T_J = 100°C
Forward Recovery Time
T_J = 25°C
I_F = 30A, di_F/dt = 240A/µS, V_R = 350V
T_J = 100°C
Reverse Recovery Current
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V
T_J = 100°C
Recovery Charge
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V
T_J = 100°C
Forward Recovery Voltage
T_J = 25°C
I_F = 30A, di_F/dt = 240A/µS, V_R = 350V
T_J = 100°C
Rate of Fall of Recovery Current
T_J = 25°C
I_F = 30A, di_F/dt = -240A/µS, V_R = 350V (See Figure 10)
T_J = 100°C
TYP
50
50
80
155
155
4
7.5
100
300
5
5
400
200
MAX
65
UNIT
nS
10
Amps
15
nC
Volts
A/µS
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_θJC
R_θJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
W_{T Package Weight}
MIN TYP MAX UNIT
0.90
20
°C/W
1.06
oz.
30
gm.
2.0
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.01
0.00510_-5
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 14, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION