APT40GP90B2DQ2 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT40GP90B2DQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT40GP90B2DQ2
UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 106°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
40
60
Amps
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 40A
I_F = 80A
I_F = 40A, T_J = 125°C
2.5
3.08
1.97
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
24
ns
t_rr
Reverse Recovery Time
-
240
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 40A, di_F/dt = -200A/µs
V_R = 667V, T_C = 25°C
-
300
nC
-
3
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 40A, di_F/dt = -200A/µs
V_R = 667V, T_C = 125°C
-
300
ns
-
1430
nC
-
8
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
145
I_F = 40A, di_F/dt = -1000A/µs
V_R = 667V, T_C = 125°C
-
2520
-
28
ns
nC
Amps
0.70
0.60
D = 0.9
0.50
0.7
0.40
0.5
0.30
Note:
0.3
t1
0.20
0.1
0.10
0.05
0
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
RC MODEL
0.0544
0.000276
Power
(watts)
0.129
0.0168
Case temperature (°C)
0.426
0.379
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL