APT40GP90B2DQ2 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
160
140
T_J = -55°C
120
100
T_J = 25°C
80
T_J = 125°C
60
40
20
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
200
250µs PULSE
180
TEST<0.5 % DUTY
CYCLE
160
140
120
100
80
T_J = -55°C
60
T_J = 25°C
40
T_J = 125°C
20
0
0
2
4
6
8
10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
T_J = 25°C.
I_C = 80A
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
I_C = 40A
3
I_C = 20A
2
1
06
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT40GP90B2DQ2(G)
160
140
120
T_J = -55°C
100
T_J = 25°C
80
T_J = 125°C
60
40
20
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 40A
14 ^{TJ = 25°C}
V_CE = 180V
12
V_CE = 450V
10
8
6
V_CE = 720V
4
2
0
0 20 40 60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5.0
4.0
I_C = 80A
I_C = 40A
3.0
I_C = 20A
2.0
1.0
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
80
Lead Temperature
Limited
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature