APT30GP60JDQ1 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT30GP60JDQ1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT30GP60JDQ1(G) UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 118°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
15
26
Amps
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 125°C
2.5
3.2
Volts
2.1
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
15
ns
t_rr
Reverse Recovery Time
-
19
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 15A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
-
21
2
nC
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
105
ns
I_F = 15A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
250
nC
-
5
-
Amps
t_rr
Reverse Recovery Time
-
55
Q_rr
Reverse Recovery Charge
I_F = 15A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
420
I_{RRM Maximum Reverse Recovery Current}
-
15
ns
nC
Amps
1.80
1.60
0.9
1.40
1.20
0.7
1.00
0.5
0.80
Note:
0.60
0.3
t1
0.40
0.20
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
RC MODEL
0.913 °C/W
0.00132 J/°C
Power
(watts)
0.573 °C/W
0.0302 J/°C
Case temperature (°C)
0.216 °C/W
0.512 J/°C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL