APT30GP60JDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
50
T_J = -55°C
40
30
T_J = 25°C
20
T_J = 125°C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
200
250µs PULSE
180
TEST<0.5 % DUTY
CYCLE
160
T_J = -55°C
140
120
100
80
T_J = 25°C
60
40
T_J = 125°C
20
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
T_J = 25°C.
250µs PULSE TEST
3.5
<0.5 % DUTY CYCLE
3.0
I_C = 60A
2.5
I_C = 30A
2.0
1.5
I_C = 15A
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT30GP60JDQ1
60
50
T_J = -55°C
40
30
T_J = 25°C
20
T_J = 125°C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 30A
14 ^{TJ = 25°C}
12
V_CE = 120V
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
3.0
I_C = 60A
2.5
I_C = 30A
2.0
1.5
I_C = 15A
1.0
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-55 -25 0
25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature