APTC60TDUM35P Datasheet, PDF (6/6 Pages) Advanced Power Technology – Triple dual Common Source Super Junction MOSFET Power Module

APTC60TDUM35P
Delay Times vs Current
350
300
td(off)
250
200
V_DS=400V
R_G=2.5Ω
150 ^TJ=125°C
L=100µH
100
50
td(on)
0
0 20 40 60 80 100 120
I_D, Drain Current (A)
Switching Energy vs Current
5
4.5 ^VDS=400V
4 ^RG=2.5Ω
3.5
T_J=125°C
L=100µH
E_off
3
2.5
E_on
2
1.5
1
0.5
0
0 20 40 60 80 100 120
I_D, Drain Current (A)
Operating Frequency vs Drain Current
140
120
ZVS
ZCS
100
80
60 V_DS=400V
D=50%
40 _RG=2.5Ω
20 ^TJ=125°C
T_C=75°C
0
hard
switching
15 20 25 30 35 40 45 50 55 60 65
I_D, Drain Current (A)
Rise and Fall times vs Current
120
V_DS=400V
100 R_G=2.5Ω
T_J=125°C
t_f
80 L=100µH
60
40
t_r
20
0
0 20 40 60 80 100 120
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
10
V_DS=400V
8 ^ID=72A
T_J=125°C
E_off
L=100µH
6
4
E_on
2
0
0
5
10 15 20 25
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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