APTC60TDUM35P Datasheet, PDF (1/6 Pages) Advanced Power Technology – Triple dual Common Source Super Junction MOSFET Power Module

APTC60TDUM35P
Triple dual Common Source
Super Junction MOSFET
Power Module
V_DSS = 600V
R_DSon = 35mΩ max @ Tj = 25°C
I_D = 72A @ Tc = 25°C
D1
D3
D5
Application
• AC Switches
G1
G3
G5
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
S1
S3
S5
S1/S2
S3/S 4
S5/ S6
Features
S2
S4
S6
•
G2
G4
G6
D2
D4
D6
D1
D3
D5
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
G1
S1 /S 2
S1
S2
G2
D2
G3
S3 /S4
S3
S4
G4
D4
G5
S5 /S6
S5
S6
G6
D6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
Absolute maximum ratings
Symbol
Parameter
current capability
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
600
V
T_c = 25°C
72
T_c = 80°C
54
A
200
±20
V
35
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
416
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
20
A
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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