APT25GP90B Datasheet, PDF (6/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

APT15DF100
V_CC
I_C
V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
t_d(off)
90%
GateVoltage _{TJ = 125°C}
DrainVoltage
t_f
Switching Energy
10%
0
Drain Current
Figure 23, Turn-off Switching Waveforms and Definitions
10%
t_d(on)
t_r
5%
90%
10%
Switching Energy
APT25GP90B
Gate Voltage
T_J = 125°C
Drain Current
5%
DrainVoltage
Figure 22, Turn-on Switching Waveforms and Definitions
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 24, E_ON1 Test Circuit
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
F_max =₂m_.87in_(.(₁f_1m3a)x1 , f_{max 2} )
f _{max 1}
3.12 (.123)
=_{12..61t53d(((o..n00)68+54)) t}
0.05
r ^{+ t}d
(
off
)
+
t_f
f_{max 2}
=^{GPatdeiss − Pcond}
Co_El_ole_{n 2}ct₊or_{E off}
P_diss
= ^{ETmJ i−tteTrC}
R _θJC
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