APT25GP90B Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
100
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
T_C = 125°C
T_C = -50°C
40
20
T_C = 25°C
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
120
250µs PULSE TEST
<0.5 % DUTY CYCLE
100
80
60
TJ = -55°C
40
TJ = 25°C
20
TJ = 125°C
0
0
2
4
6
8
10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
I_C = 25A
5
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
I_C = 50A
3
I_C = 12.5A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
100
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
APT25GP90B
60
T_C = 125°C
40
T_C = -50°C
20
T_C = 25°C
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 25A
14 ^{TJ = 25°C}
V_CE = 180V
12
V_CE = 450V
10
8
6
V_CE = 720V
4
2
0
0 20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
4
3.5
I_C = 50A
3
I_C = 25A
2.5
2
I_C = 12.5A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100
125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature