APT5510JFLL Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Performance Curves
10 %
t
d(on)
90%
t
r
5 % _{10 %}
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60B
V_DD
I_C
V_CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT5510JFLL
90%
t_d(off)
Gate Voltage
TJ = 125 C
Drain Voltage
90%
Switching Energy
tf
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.