APT5510JFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

182
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
550
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 49A
10mS
12
VDS=110V
VDS=275V
8
VDS=440V
4
0
0
40
80
120
160 200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
t_d(off)
80
V_DD = 367V
60 R_G = 5Ω
T_J = 125°C
L = 100µH
40
20
t_d(on)
0
0
20
40
60
80
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
1500
V_DD = 367V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
1000
500
E_off
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT5510JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V_DD = 367V
R_G = 5Ω
80 ^TJ ^{= 125°C}
t_f
L = 100µH
60
40
20
t_r
0
0
20
40
60
80
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2500
2000
1500
E_off
E_on
1000
V_DD = 367V
I_D = 49A
500
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE