APT50M75JFLL_04 Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 R FREDFET

10 %
t _d(on)
90%
t_r
5%
5%
10%
Gate Voltage
Drain Current
Drain Voltage
Switching Energy
T = 125 C
J
Figure 18, Turn-on Switching Waveforms and Definitions
90 %
t _d(off)
t_f
90%
APT50M75JFLL
Gate Voltage
Drain Voltage
T = 125 C
J
10%
0
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V_DD
I_D V_DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^®is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.