APT50M75JFLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 R FREDFET

DYNAMIC CHARACTERISTICS
APT50M75JFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
5590
1180
pF
85
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller ") Charge}
V_GS = 10V
V_DD = 300V
I_D = 51A @ 25°C
125
33
nC
65
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
8
V_GS = 15V
V_DD = 300V
I_D = 51A @ 25°C
17
ns
21
R_G = 0.6Ω
3
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
675
I_D = 51A, R_G = 5Ω
650
µJ
INDUCTIVE SWITCHING @ 125°C
1110
V_DD = 333V V_GS = 15V
I_D = 51A, R_G = 5Ω
755
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -51A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
Reverse Recovery Time
t_rr
(I_S = -51A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -51A, ^di/_dt = 100A/µs)
Peak Recovery Current
I_RRM
(I_S = -51A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
51 _Amps
228
1.3 Volts
15 V/ns
280
ns
600
1.9
µC
5.7
15
Amps
23
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.27
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.92mH, R_G = 25Ω, Peak I_L = 51A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D51A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
t1
t2
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION