APT50M75B2LL_04 Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET

10 %
t _d(on)
90%
t_r
5%
5%
10%
Gate Voltage
Drain Current
Drain Voltage
Switching Energy
T = 125 C
J
Figure 18, Turn-on Switching Waveforms and Definitions
90 %
t _d(off)
t_f
90%
APT50M75B2LL_LLL
Gate Voltage
Drain Voltage
T = 125 C
J
10%
0
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
V_DD
APT60DF60
I_D V_DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX^TM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source