APT50M75B2LL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 57A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 250V
I_D = 57A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
I_D = 57A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 333V V_GS = 15V
I_D = 57A, R_G = 5Ω
MIN
APT50M75B2LL_LLL
TYP
5590
1180
85
125
33
65
8
19
21
MAX
UNIT
pF
nC
ns
3
755
725
µJ
1240
845
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -57A)
t _rr
Reverse Recovery Time (I_S = -57A, dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -57A, dl_S/dt = 100A/µs)
dv_{/dt Peak Diode Recovery} dv_/dt 5
57
Amps
228
1.3 Volts
655
ns
13.5
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.22
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.54mH, R_G = 25Ω, Peak I_L = 57A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D57A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.2 ^0.9
0.7
0.15
0.5
0.1
Note:
t1
0.3
0.05
0.1
0.05
0
10^-5
SINGLE PULSE
10^-4
10^-3
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION