APT5010JLL_04 Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

10 %
t
d(on)
t
r
90%
5%
5%
10 %
Switching Energy
Gate Voltage
Drain Current
Drain Voltage
TJ = 125 C
Figure 18, Turn-on Switching Waveforms and Definitions
V_DD
APT30DF60
I_D
V_DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT5010JLL
90%
t_d(off)
90%
tf
Switching Energy
Gate Voltage
TJ = 125 C
Drain Voltage
10%
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^®is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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