APT5010JLL_04 Datasheet, PDF (1/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

APT5010JLL
500V 41A 0.100Ω
POWER MOS 7 ^R MOSFET
Power MOS 7^® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Q_g. Power MOS
with Power MOS 7^® by significantly lowering
7^® combines lower conduction and switching
R_DS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
ISOTOP^®
"UL Recognized"
D
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT5010JLL
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
500
Volts
41
Amps
164
±30
Volts
±40
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
378
Watts
3.03
W/°C
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
-55 to 150
300
41
35
1600
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
500
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 20.5A)
I_DSS
Zero Gate Voltage Drain Current (V_DS = 500V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 400V, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
3
0.100
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts