APT45GP120J Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
Coes
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT45GP120J
180
160
140
120
100
180
160
140
120
0
0 100 200 300 400 500 600 700 800 900 1000
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.40
0.35
0.9
0.30
0.7
0.25
0.5
0.20
Note:
0.15
0.3
t1
0.10
0.1
0.05
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
90
RC MODEL
Junction
temp. ( ”C)
0.0339
0.000443F
Power
(Watts)
Case temperature
0.0806
0.265
0.0269F
0.608F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 800V
R_G = 5 Ω
1
10 20 30 40 50 60 70
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
F_max = min(f_max1, f_{max 2} )
f _{max 1}
=
t _{d (on )}
+
0.05
t _r + t _{d(off )}
+
t_f
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC