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APT45GP120J Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT
TYPICAL PERFORMANCE CURVES
35
30
25
VGE= 10V
20
15
VGE= 15V
10
VCE = 600V
5
TJ = 25°C or 125°C
RG = 5Ω
L = 100 µH
0
0 10 20 30 40 50 60 70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
TJ = 25 or 125°C,VGE = 10V
70
60
50
40
30
20
TJ = 25 or 125°C,VGE = 15V
10
RG =5Ω, L = 100µH, VCE = 600V
0
10 20 30 40 50 60 70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
8000
7000
VCE = 600V
L = 100 µH
RG = 5 Ω
TJ =125°C, VGE=15V
6000 TJ =125°C,VGE=10V
5000
4000
3000
2000
TJ = 25°C, VGE=15V
1000
0
10 20
TJ = 25°C, VGE=10V
30 40 50 60
70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
12000
10000
VCE = 600V
VGE = +15V
TJ = 125°C
8000
Eon2 90A
Eoff 90A
6000
4000
Eon2 45A
2000
Eoff 45A
Eon2 22.5A
Eoff 22.5A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
180
160
VGE =10V,TJ=125°C
140
APT45GP120J
VGE =15V,TJ=125°C
120 VGE =15V,TJ=25°C
100
80
60
VGE =10V,TJ=25°C
40
VCE = 600V
20
RG = 5Ω
L = 100 µH
0
0 10 20 30 40 50 60 70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
90
TJ = 125°C, VGE = 10V or 15V
80
70
60
50
40
30
20
TJ = 25°C, VGE = 10V or 15V
10 RG =5Ω, L = 100µH, VCE = 600V
0
10 20 30 40 50 60 70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
VCE = 600V
L = 100 µH
RG = 5 Ω
4000
TJ = 125°C, VGE = 10V or 15V
3000
2000
1000
TJ = 25°C, VGE = 10V or 15V
0
0 20 30 40 50 60 70 80 90
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
7000
VCE = 600V
VGE = +15V
RG = 5 Ω
Eon2 90A
6000
5000
4000
3000
Eoff 90A
2000
Eon2 45A
Eoff 45A
Eon2 22.5A
1000
Eoff 22.5A
0
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature