APT35GP120B2DQ2 Datasheet, PDF (5/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
C_ies
1,000
500
C_oes
100
50
C_res
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GP120B2DQ2(G)
160
140
120
100
80
60
40
20
0 _{0 100 200 300 400 500 600 700 800 900 1000}
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.25
D = 0.9
0.20
0.15
0.10
0.05
0
10^-5
0.7
0.5
Note:
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp. ( ºC)
Power
(Watts)
Case temperature
RC MODEL
0.0896
0.140
0.0108
0.228
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
180
100
50
F
max
=
min
(f_max,
f_max2)
0.05
f_max1 = _{td(on) + tr + td(off) + tf}
T_J = 125°C
T_C = 75°C
f_max2 =
P_diss - P_cond
E_on2 + E_off
D = 50 %
10 _{VCE = 800V}
7 ^{RG = 5Ω}
P_diss =
T_J - T_C
R_θJC
10 20 30 40 50 60 70
Figure 20, O^ICp^,e^Cra^Ot^Lin^Lg^ECF^Tre^Oq^Rue^Cn^Uc^Ry^Rv^Es^NC^To^(Alle⁾ ctor Current