APT30GP60BDQ1 Datasheet, PDF (5/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
C_ies
1,000
500
C_0es
100
50
10
C_res
1
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT30GP60BDQ1(G)
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
0.1
SINGLE PULSE
0.05
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. (°C)
300
0.0196
0.005F
Power
(watts)
0.107
0.0132F
Case temperature. (°C)
0.144
0.135F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
100
F
max
=
min
(f_max,
f_max2)
50
0.05
f_max1 = _{td(on) + tr + td(off) + tf}
T_J = 125°C
T_C = 75°C
f_max2 =
P_diss - P_cond
E_on2 + E_off
D = 50 %
V_CE = 400V
10 ^{RG = 5Ω}
P_diss =
T_J - T_C
R_θJC
0 10 20 30 40 50 60
Figure 20, O^ICp^,e^Cra^Ot^Lin^Lg^ECF^Tre^Oq^Rue^Cn^Uc^Ry^Rv^Es^NC^To^(Alle⁾ ctor Current