APT30GP60BDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

20
16
V_GE = 15V
12
8
4 ^VCE ^{= 400V}
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100 µH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
R_G = 5Ω, L = 100µH, V_CE = 400V
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
0 _{0 10 20 30 40 50 60 70}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 5Ω
1000
T_J = 125°C,V_GE =15V
800
600
400
200
T_J = 25°C,V_GE =15V
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4000
3500
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_off,60A
3000
2500
E_on2,60A
2000
1500
1000
500
E_on2,30A
E_off,30A
E_on2,15A
0
E_off,15A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT30GP60BDQ1(G)
100
80
V_GE =15V,T_J=125°C
60
40
V_GE =15V,T_J=25°C
20 _{VCE = 400V}
R_G = 5Ω
L = 100 µH
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
R_G = 5Ω, L = 100µH, V_CE = 400V
80
T_J = 125°C, V_GE = 15V
60
40
T_J = 25°C, V_GE = 15V
20
0 _{0 10 20 30 40 50 60 70}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
V_CE = 400V
V_GE = +15V
R_G = 5Ω
1200
1000
T_J = 125°C, V_GE = 15V
800
600
400
200
T_J = 25°C, V_GE = 15V
0
0 10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
1400
V_CE = 400V
V_GE = +15V
R_G = 5Ω
1200 _Eon2,60A
1000
800
E_off,60A
600
400 ^Eon2,^30A
200
E_on2,15A
E_off,30A
0
E_off,15A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature