English
Language : 

ARF460A Datasheet, PDF (4/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
Bias
0 - 12V
RF
Input C2
C3
C6
L1
R2
R1
C1
ARF460A/B
L4
C7
C8
L3
C9
L2
DUT
C5
C4
+
- 125V
RF
Output
40.68 MHz Test Circuit
C1 -- 2000 pF 100V NPO chip
mounted at gate lead
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
C9 -- 2200 pF 500V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 6t #16 AWG .312" ID .4"L ~185nH
L3 -- 15t #24 AWG .25"ID ~.85uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF460A/B
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Top View
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Device
ARF - A ARF - B
Gate
Drain
Source
Source
Drain
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.