ARF460A Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

ARF460A/B
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.60
25
VGS=15 & 10V
9V
20
8V
15
7V
10
6.5V
6V
5
5.5V
5V
0
4.5V
1
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp. ( ”C)
RC MODEL
0.0284
0.00155F
Power
(Watts)
0.165
0.00934F
Case temperature
0.307
0.128F
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Zin (Ω)
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
Z_OL (Ω)
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Zin - Gate shunted with 25Ω!!
I_DQ = 100mA
Z_OL - Conjugate of optimum load for 150 Watts output at Vdd = 125V