APTC80H29SCT Datasheet, PDF (4/7 Pages) Advanced Power Technology – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80H29SCT
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.8
0.9
0.7
0.6
0.7
0.5
0.4
0.5
0.3
0.3
0.2
0.1
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
40
35
V_GS=15&10V
30
6.5V
25
6V
20
15
10
5
0
0
5.5V
5V
4.5V
4V
5
10 15 20 25
V_DS, Drain to Source Voltage (V)
Transfert Characteristics
50
V_DS > I_D(on)xRDS(on)MAX
40 ^{250µs pulse test @ < 0.5 duty cycle}
30
20
10
0
0
T_J=25°C
T_J=125°C
T_J=-55°C
12345678
V_GS, Gate to Source Voltage (V)
R_DS(on) vs Drain Current
1.4
Normalized to
1.3 VGS=10V @ 7.5A
V_GS=10V
1.2
1.1
V_GS=20V
1
0.9
0.8
0
5 10 15 20 25 30
I_D, Drain Current (A)
DC Drain Current vs Case Temperature
16
14
12
10
8
6
4
2
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
APT website – http://www.advancedpower.com
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